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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CHM3055LXPT CURRENT 3.7 Ampere FEATURE * Small package. (SC-62/SOT-89 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. 4.6MAX. 1.7MAX. SC-62/SOT-89 1.6MAX. 0.4+0.05 2.5+0.1 +0.08 0.45-0.05 +0.08 0.40-0.05 1.50+0.1 +0.08 0.40-0.05 1.50+0.1 CONSTRUCTION * N-Channel Enhancement 1 1 Gate 2 3 CIRCUIT (1) G D (3) 2 Drain 3 Source 0.8MIN. 4.6MAX. S (2) Dimensions in millimeters SC-62/SOT-89 Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted CHM3055LXPT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous 60 V V 20 3.7 ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range (Note 3) A 25 3000 -55 to 150 -55 to 150 mW C C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 42 C/W 2006-01 RATING CHARACTERISTIC CURVES ( CHM3055LXPT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = 250 A VDS = 60 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V 60 1 +100 -100 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) g FS Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 A VGS=10V, ID=3.9A VGS=4.5V, ID=3.7A 1 68 90 3 6 2 100 V m 120 S Forward Transconductance VDS =5V, ID = 3.7A SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q tr toff tf gd Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=48V, ID=3.7A VGS=10V V DD= 25V ID = 1.0A , VGS = 10 V RGEN= 6 13 2.6 3.2 15 18 40 16 17 nC ton 20 20 50 20 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode Forward Current (Note 1) (Note 2) 2.5 1.5 A V Drain-Source Diode Forward Voltage IS = 1.5A , VGS = 0 V RATING CHARACTERISTIC CURVES ( CHM3055LXPT ) Typical Electrical Characteristics Figure 1. Output Characteristics 25 Figure 2. Transfer Characteristics 10 V G S =1 0 V 20 8.0V 6.0V I D , DRAIN CURRENT (A) I D , DRAIN CURRENT (A) 8 VG S =5 . 0 V 15 TJ=-55C 6 10 VG S =4 . 0 V VG S =3 . 0 V 4 J=125C T 2 5 TJ=25C 0 0 2.0 1.0 V DS , DRAIN-TO-SOURCE VOLTAGE (V) 3.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 VGS , GATE-TO-SOURCE VOLTAGE (V) Figure 3. Gate Charge 10 2.2 VDS=48V ID=3.7A 1.9 Figure 4. On-Resistance Variation with Temperature VGS=10V ID=3.9A VGS , GATE TO SOURCE VOLTAGE (V) DRAIN-SOURCE ON-RESISTANCE 8 R DS(on) , NO RMALIZED 1.6 6 1.3 4 1.0 2 0.7 0 0 4 8 Qg , TOTAL GATE CHARGE (nC) 12 16 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (C) 150 200 Figure 5. Gate Threshold Variation with Temperature 1.3 1.2 VDS=VGS ID=250uA Vth , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (C) 125 150 |
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